MMDT2222V-7, Bipolar Transistors - BJT NPN BIPOLAR
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см. техническую документацию
см. техническую документацию
580 ֏
от 10 шт. —
383 ֏
от 100 шт. —
168 ֏
от 1000 шт. —
121 ֏
1 шт.
на сумму 580 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Технические параметры
| Brand | Diodes Incorporated |
| Collector- Base Voltage VCBO | 75 V |
| Collector- Emitter Voltage VCEO Max | 40 V |
| Configuration | Dual |
| DC Collector/Base Gain Hfe Min | 35 |
| Emitter- Base Voltage VEBO | 6 V |
| Factory Pack Quantity | 3000 |
| Gain Bandwidth Product FT | 300 MHz |
| Manufacturer | Diodes Incorporated |
| Maximum DC Collector Current | 0.6 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-563-6 |
| Packaging | Cut Tape or Reel |
| Pd - Power Dissipation | 150 mW |
| Product Category | Bipolar Transistors-BJT |
| Product Type | BJTs-Bipolar Transistors |
| Series | MMDT22 |
| Subcategory | Transistors |
| Transistor Polarity | NPN |
Техническая документация
Datasheet MMDT2222V-7
pdf, 573 КБ
