DDTC114ECA-7-F, Digital Transistors PRE-BIAS NPN 200mW
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Описание
Semiconductors\Discrete Semiconductors\Transistors\Digital Transistors
Описание Транзистор: NPN, биполярный, BRT, 50В, 50мА, 200мВт, SOT23, R1: 10кОм Характеристики | Категория | Транзистор |
| Тип | биполярный |
| Вид | NPN |
Технические параметры
| Base Product Number | DDTC114 -> |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| ECCN | EAR99 |
| Frequency - Transition | 250MHz |
| HTSUS | 8541.21.0075 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Power - Max | 200mW |
| REACH Status | REACH Unaffected |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | SOT-23-3 |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500ВµA, 10mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Collector-Emitter Breakdown Voltage | 50V |
| Maximum DC Collector Current | 100mA |
| Pd - Power Dissipation | 200mW |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 200 mW |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Typical Input Resistor | 10 kΩ |
| Typical Resistor Ratio | 1 |
| Вес, г | 0.06 |
