MMST3906-7-F, Bipolar Transistors - BJT -40V 200mW
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см. техническую документацию
см. техническую документацию
220 ֏
от 10 шт. —
150 ֏
от 100 шт. —
62 ֏
от 1000 шт. —
39 ֏
1 шт.
на сумму 220 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Технические параметры
Brand | Diodes Incorporated |
Collector- Base Voltage VCBO | -40 V |
Collector- Emitter Voltage VCEO Max | -40 V |
Collector-Emitter Saturation Voltage | -0.3 V |
Configuration | Single |
Continuous Collector Current | -0.2 A |
DC Current Gain HFE Max | 300 |
Emitter- Base Voltage VEBO | -5 V |
Factory Pack Quantity | 3000 |
Gain Bandwidth Product FT | 300 MHz |
Manufacturer | Diodes Incorporated |
Maximum DC Collector Current | 0.2 A |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Package / Case | SOT-323-3 |
Packaging | Cut Tape or Reel |
Pd - Power Dissipation | 200 mW |
Product Category | Bipolar Transistors-BJT |
Product Type | BJTs-Bipolar Transistors |
Series | MMST39 |
Subcategory | Transistors |
Transistor Polarity | PNP |
Maximum Collector Base Voltage | -40 V |
Maximum Collector Emitter Voltage | 40 V |
Maximum Emitter Base Voltage | -5 V |
Maximum Power Dissipation | 200 mW |
Minimum DC Current Gain | 100 |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | SOT-323(SC-70) |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Type | PNP |
Collector Current (Ic) | 200mA |
Collector-Emitter Breakdown Voltage (Vceo) | 40V |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 300mV@5mA, 50mA |
DC Current Gain (hFE@Ic,Vce) | 100@10mA, 1V |
Power Dissipation (Pd) | 200mW |
Transition Frequency (fT) | 300MHz |
Вес, г | 0.01 |