TN2106N3-G, MOSFETs 60V 2.5Ohm
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см. техническую документацию
см. техническую документацию
880 ֏
от 100 шт. —
660 ֏
от 500 шт. —
560 ֏
1 шт.
на сумму 880 ֏
Описание
Unclassified
N-канал 60 В 300 мА (Tj) 740 мВт (Tc) сквозное отверстие TO-92-3
Технические параметры
| Brand: | Microchip Technology |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 5 ns |
| Forward Transconductance - Min: | 150 mS |
| Id - Continuous Drain Current: | 300 mA |
| Manufacturer: | Microchip |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-92-3 |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 740 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signal |
| Rds On - Drain-Source Resistance: | 2.5 Ohms |
| Rise Time: | 5 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | FET |
| Typical Turn-Off Delay Time: | 6 ns |
| Typical Turn-On Delay Time: | 3 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 600 mV |
| Base Product Number | TN2106 -> |
| Current - Continuous Drain (Id) @ 25В°C | 300mA (Tj) |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| HTSUS | 8541.21.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| PCN Assembly/Origin | http://www.microchip.com/mymicrochip/NotificationD |
| PCN Packaging | http://www.microchip.com/mymicrochip/NotificationD |
| Power Dissipation (Max) | 740mW (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 500mA, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | TO-92-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| FET Feature | - |
| Manufacturer | Microchip Technology |
| Packaging | Bulk |
| Part Status | Active |
| Series | - |
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.8V |
| Maximum Continuous Drain Current | 300 mA |
| Maximum Drain Source Resistance | 5 Ω |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | 20 V |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 740 mW |
| Minimum Gate Threshold Voltage | 0.6V |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Package Type | TO-92 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Width | 4.06mm |
| Вес, г | 0.45 |
