DMMT5551-7-F, Bipolar Transistors - BJT MATCHED NPN
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530 ֏
от 10 шт. —
361 ֏
от 100 шт. —
141 ֏
от 1000 шт. —
110 ֏
1 шт.
на сумму 530 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Описание Транзистор NPN x2, биполярный, 160В, 200мА, 300мВт, SOT26 Характеристики | Категория | Транзистор |
| Тип | биполярный |
| Вид | NPN |
Технические параметры
| Collector-Emitter Breakdown Voltage | 160V |
| Maximum DC Collector Current | 200mA |
| Pd - Power Dissipation | 300mW |
| Transistor Type | 2 NPNпј€Doubleпј‰Pairing |
| Automotive | No |
| Configuration | Dual |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Base Emitter Saturation Voltage (V) | 1@1mA@10mA|1@5mA@50mA |
| Maximum Collector Base Voltage (V) | 180 |
| Maximum Collector Cut-Off Current (nA) | 50 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.15@1mA@10mA|0.2@5mA@50mA |
| Maximum Collector-Emitter Voltage (V) | 160 |
| Maximum DC Collector Current (A) | 0.2 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 300 |
| Maximum Transition Frequency (MHz) | 300 |
| Minimum DC Current Gain | 80@1mA@5V|80@10mA@5V|30@50mA@5V |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 2 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 6 |
| Pin Count | 6 |
| PPAP | No |
| Product Category | Bipolar Small Signal |
| Standard Package Name | SOT |
| Supplier Package | SOT-26 |
| Type | NPN |
| Вес, г | 0.008 |
