IXFX64N60P3, MOSFETs 600V 64A 0.095Ohm PolarP3 Power MOSFET
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Описание
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PolarP3™ HiPerFET™ Power MOSFETsIXYS PolarP3™ HiPerFET™ Power MOSFETs are the latest addition to the benchmark high-performance Polar-Series for the product portfolio between 300V, 500V, and 600V. The high Figure of Merit (FOM), which is the multiplication of Q g and R DS(on), provides an excellent alternative to weaker super junction technologies. These PolarP3 HiPerFETs demonstrate up to a 12% reduction in on-state resistance (R dson ), a 14 percent reduction in gate charge (Q g ) and as high as a 20 percent increase in maximum power dissipation (P d ). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing the total power density of the device.
Технические параметры
| Brand: | IXYS |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Fall Time: | 11 ns |
| Forward Transconductance - Min: | 60 S, 36 S |
| Id - Continuous Drain Current: | 64 A |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 1.13 kW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 145 nC |
| Rds On - Drain-Source Resistance: | 95 mOhms |
| Rise Time: | 17 ns |
| Series: | IXFX64N60 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | HiPerFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| California Prop 65 | Warning Information |
| Current - Continuous Drain (Id) @ 25В°C | 64A (Tc) |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 145nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 9900pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tube |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 1130W (Tc) |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 32A, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Series | HiPerFETв„ў, Polar3в„ў -> |
| Supplier Device Package | PLUS247в„ў-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±30V |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Вес, г | 6 |
Техническая документация
Datasheet
pdf, 133 КБ
Datasheet IXFX64N60P3
pdf, 139 КБ
