QRD1113, Optical Switches, Reflective, Phototransistor Output REFL OBJECT SENSOR
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см. техническую документацию
см. техническую документацию
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2 470 ֏
от 10 шт. —
1 410 ֏
от 100 шт. —
1 200 ֏
от 500 шт. —
960 ֏
1 шт.
на сумму 2 470 ֏
Описание
Optoelectronics\Optical Switches\Optical Switches, Reflective, Phototransistor Output
The QRD1113/14 reflective sensor consists of an infrared emitting diode and an NPN silicon photo darlington mounted side by side in a black plastic housing.
Технические параметры
Collector Current | 0.3(Minimum)mA |
Collector Emitter Voltage | 30V |
Emitter Collector Voltage | 5V |
Maximum Dark Current | 100nA |
Maximum Wavelength Detected | 940nm |
Mounting Type | Through Hole |
Number of Channels | 1 |
Number of Pins | 4 |
Output Signal Type | Phototransistor |
Package Type | Custom 4L |
Saturation Voltage | 0.4V |
Spectral Range of Sensitivity | 940 nm |
Spectrums Detected | Infrared |
Typical Fall Time | 50µs |
Typical Rise Time | 10µs |
Width | 6.1mm |
Техническая документация
Datasheet
pdf, 743 КБ