IXFB210N30P3, MOSFETs N-Channel: Power MOSFET w/Fast Diode
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Описание
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A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) A wide range of advanced discrete Power MOSFET devices from IXYSundefined
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 210 A |
| Maximum Drain Source Resistance | 14.5 mΩ |
| Maximum Drain Source Voltage | 300 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.89 kW |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | PLUS264 |
| Pin Count | 3 |
| Series | HiperFET, Polar3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 268 nC @ 10 V |
| Width | 5.31mm |
| Вес, г | 3 |
