CSD13306WT, MOSFETs 12V N-Channel NexFET Power MOSFET
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800 ֏
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640 ֏
от 250 шт. —
620 ֏
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Описание
Unclassified
N-канал 12 В, 3,5 А (зад.) 1,9 Вт (зад.), Поверхностный монтаж, 6-DSBGA (1x1,5)
Технические параметры
| Base Product Number | CSD13306 -> |
| Current - Continuous Drain (Id) @ 25В°C | 3.5A (Ta) |
| Drain to Source Voltage (Vdss) | 12V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11.2nC @ 4.5V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 1370pF @ 6V |
| Manufacturer Product Page | http://www.ti.com/general/docs/suppproductinfo.tsp |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | 6-UFBGA, DSBGA |
| Power Dissipation (Max) | 1.9W (Ta) |
| Rds On (Max) @ Id, Vgs | 10.2mOhm @ 1.5A, 4.5V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Series | NexFETв„ў -> |
| Supplier Device Package | 6-DSBGA (1x1.5) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±10V |
| Vgs(th) (Max) @ Id | 1.3V @ 250ВµA |
| Channel Type | N |
| Maximum Continuous Drain Current | 3.5 A |
| Maximum Drain Source Voltage | 12 V |
| Package Type | DSBGA |
| Вес, г | 6 |
