IXFN64N50P, Discrete Semiconductor Modules 500V 64A
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31 300 ֏
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Описание
Semiconductors\Discrete Semiconductors\Discrete Semiconductor Modules
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS A wide range of advanced discrete Power MOSFET devices from IXYSundefined
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 61 A |
| Maximum Drain Source Resistance | 85 mΩ |
| Maximum Drain Source Voltage | 500 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Gate Threshold Voltage | 5.5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 700 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Screw Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-227 |
| Pin Count | 4 |
| Series | HiperFET, Polar |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 150 nC @ 10 V |
| Width | 25.42mm |
| Вес, г | 36.92 |
