CSD19538Q3A, MOSFETs 100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 61 mOhm 8-VSONP -55 to 150
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750 ֏
от 10 шт. —
660 ֏
от 100 шт. —
401 ֏
от 500 шт. —
309 ֏
1 шт.
на сумму 750 ֏
Описание
Unclassified
POWER FIELD-EFFECT TRANSISTOR, 4.9A I(D), 100V, 0.072OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
Технические параметры
Current - Continuous Drain (Id) @ 25В°C | 15A(Ta) |
Drain to Source Voltage (Vdss) | 100V |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 4.3nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 454pF @ 50V |
Manufacturer | Texas Instruments |
Mounting Type | Surface Mount |
Operating Temperature | -55В°C ~ 150В°C(TJ) |
Package / Case | 8-PowerVDFN |
Packaging | Tape & Reel(TR) |
Part Status | Active |
Power Dissipation (Max) | 2.8W(Ta), 23W(Tc) |
Rds On (Max) @ Id, Vgs | 59mOhm @ 5A, 10V |
Series | NexFETв(ў |
Supplier Device Package | 8-VSONP(3x3.15) |
Technology | MOSFET(Metal Oxide) |
Vgs (Max) | В±20V |
Vgs(th) (Max) @ Id | 3.8V @ 250ВµA |
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 14 A |
Maximum Drain Source Voltage | 100 V |
Number of Elements per Chip | 1 |
Package Type | VSONP |
Pin Count | 8 |
Вес, г | 1 |
Техническая документация
Документация
pdf, 352 КБ