IXFN360N10T, MOSFET Modules 360 Amps 100V
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см. техническую документацию
см. техническую документацию
33 900 ֏
от 10 шт. —
27 900 ֏
1 шт.
на сумму 33 900 ֏
Описание
Unclassified
A wide range of advanced discrete Power MOSFET devices from IXYS
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.2V |
| Maximum Continuous Drain Current | 360 A |
| Maximum Drain Source Resistance | 2.6 mΩ |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 830 W |
| Minimum Gate Threshold Voltage | 2.5V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Screw Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-227 |
| Pin Count | 4 |
| Series | GigaMOS Trench HiperFET |
| Typical Gate Charge @ Vgs | 525 nC @ 10 V |
| Width | 25.07mm |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet IXFN360N10T
pdf, 175 КБ
