IXFN210N30P3, Discrete Semiconductor Modules N-Channel: Power MOSFET w/Fast Diode
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
54 600 ֏
от 10 шт. —
44 100 ֏
от 20 шт. —
38 600 ֏
от 50 шт. —
37 300 ֏
Добавить в корзину 1 шт.
на сумму 54 600 ֏
Описание
Semiconductors\Discrete Semiconductors\Discrete Semiconductor Modules
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) A wide range of advanced discrete Power MOSFET devices from IXYSundefined
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 192 A |
| Maximum Drain Source Resistance | 14.5 mΩ |
| Maximum Drain Source Voltage | 300 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.5 kW |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Screw Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-227 |
| Pin Count | 4 |
| Series | HiperFET, Polar3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 268 nC @ 10 V |
| Width | 25.07mm |
| Вес, г | 30 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet IXFN210N30P3
pdf, 127 КБ
