2ED2106S06FXUMA1
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см. техническую документацию
см. техническую документацию
2 470 ֏
от 2 шт. —
2 030 ֏
от 5 шт. —
1 710 ֏
от 10 шт. —
1 580 ֏
1 шт.
на сумму 2 470 ֏
Описание
Электроэлемент
650 V high-side and low-side gate driver with integrated bootstrap diode
Технические параметры
| Fall Time | 80ns |
| Output Current | 290 mA |
| Package Type | DSO |
| Pin Count | 8 |
| Supply Voltage | 20V |
| Brand: | Infineon Technologies |
| Configuration: | Inverting |
| Factory Pack Quantity: | 2500 |
| Fall Time: | 35 ns |
| Logic Type: | CMOS, LSTTL |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +125 C |
| Maximum Turn-Off Delay Time: | 300 ns |
| Maximum Turn-On Delay Time: | 300 ns |
| Minimum Operating Temperature: | -40 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Number of Drivers: | 2 Driver |
| Number of Outputs: | 2 Output |
| Operating Supply Current: | 300 uA |
| Output Current: | 290 mA |
| Package/Case: | DSO-8 |
| Part # Aliases: | 2ED2106S06F SP001710050 |
| Pd - Power Dissipation: | 625 mW |
| Product Category: | Gate Drivers |
| Product Type: | Gate Drivers |
| Product: | IGBT, MOSFET Gate Drivers |
| Propagation Delay - Max: | 300 ns |
| Rise Time: | 100 ns |
| Shutdown: | Shutdown |
| Subcategory: | PMIC-Power Management ICs |
| Supply Voltage - Max: | 20 V |
| Supply Voltage - Min: | 10 V |
| Technology: | Si |
| Type: | High-Side, Low-Side |
| Вес, г | 0.45 |
