BSC040N08NS5ATMA1
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см. техническую документацию
см. техническую документацию
3 170 ֏
от 2 шт. —
2 690 ֏
от 5 шт. —
2 320 ֏
от 10 шт. —
2 170 ֏
1 шт.
на сумму 3 170 ֏
Описание
Электроэлемент
MOSFET, N-CH, 80V, 100A, TDSON, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.0034ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Dissipation, RoHS Compliant: Yes
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 5000 |
| Fall Time | 6 ns |
| Forward Transconductance - Min | 45 S |
| Height | 1.27 mm |
| Id - Continuous Drain Current | 100 A |
| Length | 5.9 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TDSON-8 |
| Packaging | Reel |
| Part # Aliases | BSC040N08NS5 SP001132452 |
| Pd - Power Dissipation | 104 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 43 nC |
| Rds On - Drain-Source Resistance | 5.7 mOhms |
| Rise Time | 8 ns |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 25 ns |
| Typical Turn-On Delay Time | 14 ns |
| Unit Weight | 0.01787 oz |
| Vds - Drain-Source Breakdown Voltage | 80 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.2 V |
| Width | 5.15 mm |
| Channel Type | N |
| Forward Diode Voltage | 1.1V |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Resistance | 5.7 mΩ |
| Maximum Drain Source Voltage | 80 V |
| Maximum Gate Source Voltage | 20 V |
| Maximum Gate Threshold Voltage | 3.8V |
| Maximum Power Dissipation | 104 W |
| Minimum Gate Threshold Voltage | 2.2V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | TDSON |
| Pin Count | 8 |
| Series | BSC040N08NS5 |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 43 nC @ 10 V |
| Continuous Drain Current (Id) | 100A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 4mΩ@50A, 10V |
| Drain Source Voltage (Vdss) | 80V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3.8V@67uA |
| Input Capacitance (Ciss@Vds) | 3.9nF@40V |
| Power Dissipation (Pd) | 2.5W;104W |
| Total Gate Charge (Qg@Vgs) | 54nC@10V |
| Type | 1PCSNChannel |
Техническая документация
Datasheet BSC040N08NS5ATMA1
pdf, 1233 КБ
