IPP220N25NFDAKSA1
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см. техническую документацию
см. техническую документацию
6 300 ֏
от 2 шт. —
5 700 ֏
от 5 шт. —
5 300 ֏
от 10 шт. —
5 000 ֏
1 шт.
на сумму 6 300 ֏
Описание
Электроэлемент
MOSFET, N-CH, 250V, 61A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175В°C; Product Range:OptiMOS FD Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
Технические параметры
| Transistor Polarity | N Channel; Continuous Drain Current Id |
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.2V |
| Maximum Continuous Drain Current | 61 A |
| Maximum Drain Source Resistance | 22 mΩ |
| Maximum Drain Source Voltage | 250 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 300 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-220 |
| Pin Count | 3 |
| Series | OptiMOS FD |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 65 nC @ 10 V |
| Width | 4.57mm |
| Вес, г | 2.91 |
