IPN60R1K0CEATMA1
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
840 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
580 ֏
от 10 шт. —
480 ֏
от 100 шт. —
390 ֏
2 шт.
на сумму 1 680 ֏
Описание
Электроэлемент
MOSFET, N-CH, 600V, 6.8A, SOT-223-3; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.9ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; P
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current - (A) | 6.8 |
| Maximum Drain Source Resistance - (mOhm) | 1000@10V |
| Maximum Drain Source Voltage - (V) | 600 |
| Maximum Gate Source Voltage - (V) | 20 |
| Maximum Gate Threshold Voltage - (V) | 3.5 |
| Maximum Power Dissipation - (mW) | 5000 |
| Military | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -40~150 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Process Technology | CoolMOS |
| Supplier Package | SOT-223 |
| Typical Gate Charge @ 10V - (nC) | 13 |
| Typical Gate Charge @ Vgs - (nC) | 13@10V |
| Typical Input Capacitance @ Vds - (pF) | 280@100V |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 13 ns |
| Id - Continuous Drain Current: | 6.8 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-223-3 |
| Part # Aliases: | IPN60R1K0CE SP001434884 |
| Pd - Power Dissipation: | 5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 13 nC |
| Rds On - Drain-Source Resistance: | 2.34 Ohms |
| Rise Time: | 8 ns |
| Series: | CoolMOS CE |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | CoolMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 60 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Вес, г | 0.112 |
Техническая документация
Datasheet IPN60R1K0CEATMA1
pdf, 1049 КБ
Datasheet IPN60R1K0CEATMA1
pdf, 1233 КБ
