SI2333CDS-T1-GE3, 12V 5.1A 35m@4.5V,5.1A 1V@250uA P Channel SOT-23-3 MOSFETs ROHS
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см. техническую документацию
см. техническую документацию
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Технические параметры
| Brand | Vishay/Siliconix |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Fall Time | 12 ns |
| Forward Transconductance - Min | 18.5 S |
| Id - Continuous Drain Current | 7.1 A |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number Of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Packaging | Cut Tape or Reel |
| Part # Aliases | SI2333CDS-GE3 |
| Pd - Power Dissipation | 2.5 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 15 nC |
| Rds On - Drain-Source Resistance | 35 mOhms |
| Rise Time | 35 ns |
| Series | SI2 |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | TrenchFET |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 45 ns |
| Typical Turn-On Delay Time | 13 ns |
| Vds - Drain-Source Breakdown Voltage | 12 V |
| Vgs - Gate-Source Voltage | 4.5 V |
| Vgs Th - Gate-Source Threshold Voltage | 400 mV |
| Вес, г | 0.041 |
Техническая документация
Datasheet
pdf, 225 КБ
