MMDT4413-7-F, Bipolar Transistors - BJT 40 / 40V 200mW
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см. техническую документацию
см. техническую документацию
530 ֏
от 10 шт. —
317 ֏
от 100 шт. —
137 ֏
от 1000 шт. —
110 ֏
1 шт.
на сумму 530 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Trans GP BJT NPN/PNP 40V 0.6A 200mW 6-Pin SOT-363 T/R
Технические параметры
| Automotive | No |
| Configuration | Dual |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Collector Base Voltage (V) | 60 NPN|40 PNP |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4 15mA 150mA|0.75 50mA 500mA |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Maximum DC Collector Current (A) | 0.6 |
| Maximum Emitter Base Voltage (V) | 6 NPN|5 PNP |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 200 |
| Maximum Transition Frequency (MHz) | 250(Min) |
| Minimum Operating Temperature (°C) | -65 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 2 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 6 |
| Pin Count | 6 |
| PPAP | No |
| Product Category | Bipolar Small Signal |
| Standard Package Name | SOT |
| Supplier Package | SOT-363 |
| Type | NPN|PNP |
| Maximum Collector Base Voltage | 60 V |
| Maximum Collector Emitter Voltage | 40 V |
| Maximum DC Collector Current | 600 mA |
| Maximum Emitter Base Voltage | 6 V |
| Maximum Operating Frequency | 250 MHz |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 200 mW |
| Minimum DC Current Gain | 100 |
| Mounting Type | Surface Mount |
| Package Type | SOT-363(SC-88) |
| Transistor Configuration | Isolated |
| Transistor Type | NPN+PNP |
| Вес, г | 0.006 |
