MMDT2907A-7-F
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см. техническую документацию
см. техническую документацию
620 ֏
Мин. кол-во для заказа 2 шт.
от 10 шт. —
423 ֏
от 100 шт. —
198 ֏
от 500 шт. —
150 ֏
2 шт.
на сумму 1 240 ֏
Технические параметры
Brand | Diodes Incorporated |
Collector- Base Voltage VCBO | -60 V |
Collector- Emitter Voltage VCEO Max | -60 V |
Collector-Emitter Saturation Voltage | -1.6 V |
Configuration | Dual |
Continuous Collector Current | -0.6 A |
DC Current Gain HFE Max | 300 |
Emitter- Base Voltage VEBO | -5 V |
Factory Pack Quantity | 3000 |
Gain Bandwidth Product FT | 200 MHz |
Manufacturer | Diodes Incorporated |
Maximum DC Collector Current | 0.6 A |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Package / Case | SOT-363-6 |
Packaging | Cut Tape or Reel |
Pd - Power Dissipation | 200 mW |
Product Category | Bipolar Transistors-BJT |
Product Type | BJTs-Bipolar Transistors |
Series | MMDT29 |
Subcategory | Transistors |
Transistor Polarity | PNP |
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 60 V |
Collector- Emitter Voltage VCEO Max: | 60 V |
Collector-Emitter Saturation Voltage: | 1.6 V |
Configuration: | Dual |
Continuous Collector Current: | -0.6 A |
DC Current Gain hFE Max: | 300 |
Emitter- Base Voltage VEBO: | 5 V |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Gain Bandwidth Product fT: | 200 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 600 mA |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-363-6 |
Pd - Power Dissipation: | 200 mW |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | MMDT29 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | PNP |
Техническая документация
Datasheet
pdf, 401 КБ
Datasheet MMDT2907A-7-F
pdf, 245 КБ