MMDT2907A-7-F

Фото 1/2 MMDT2907A-7-F
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см. техническую документацию
620 ֏
Мин. кол-во для заказа 2 шт.
от 10 шт.423 ֏
от 100 шт.198 ֏
от 500 шт.150 ֏
2 шт. на сумму 1 240 ֏
Номенклатурный номер: 8006568039
Бренд: DIODES INC.

Технические параметры

Brand Diodes Incorporated
Collector- Base Voltage VCBO -60 V
Collector- Emitter Voltage VCEO Max -60 V
Collector-Emitter Saturation Voltage -1.6 V
Configuration Dual
Continuous Collector Current -0.6 A
DC Current Gain HFE Max 300
Emitter- Base Voltage VEBO -5 V
Factory Pack Quantity 3000
Gain Bandwidth Product FT 200 MHz
Manufacturer Diodes Incorporated
Maximum DC Collector Current 0.6 A
Maximum Operating Temperature +150 C
Minimum Operating Temperature -55 C
Mounting Style SMD/SMT
Package / Case SOT-363-6
Packaging Cut Tape or Reel
Pd - Power Dissipation 200 mW
Product Category Bipolar Transistors-BJT
Product Type BJTs-Bipolar Transistors
Series MMDT29
Subcategory Transistors
Transistor Polarity PNP
Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 60 V
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 1.6 V
Configuration: Dual
Continuous Collector Current: -0.6 A
DC Current Gain hFE Max: 300
Emitter- Base Voltage VEBO: 5 V
Factory Pack Quantity: Factory Pack Quantity: 3000
Gain Bandwidth Product fT: 200 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 600 mA
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package / Case: SOT-363-6
Pd - Power Dissipation: 200 mW
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: MMDT29
Subcategory: Transistors
Technology: Si
Transistor Polarity: PNP

Техническая документация

Datasheet
pdf, 401 КБ
Datasheet MMDT2907A-7-F
pdf, 245 КБ