IXGN320N60A3
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см. техническую документацию
см. техническую документацию
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Описание
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching.
Технические параметры
| Channel Type | N |
| Configuration | Single |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Continuous Collector Current | 320 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 735 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Package Type | SOT-227B |
| Pin Count | 4 |
| Switching Speed | 5kHz |
| Transistor Configuration | Common Emitter |
