BSC0904NSIATMA1
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1 370 ֏
от 2 шт. —
1 060 ֏
1 шт.
на сумму 1 370 ֏
Описание
Электроэлемент
MOSFET, N-CH, 30V, 78A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:78A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0031ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Powe
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current - (A) | 20 |
| Maximum Drain Source Resistance - (mOhm) | 3.7@10V |
| Maximum Drain Source Voltage - (V) | 30 |
| Maximum Gate Source Voltage - (V) | ??20 |
| Maximum Gate Threshold Voltage - (V) | 2 |
| Maximum Power Dissipation - (mW) | 2500 |
| Military | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~150 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Process Technology | OptiMOS |
| Standard Package Name | SON |
| Supplier Package | TDSON EP |
| Typical Gate Charge @ 10V - (nC) | 17 |
| Typical Gate Charge @ Vgs - (nC) | 8.5@4.5VI17@10V |
| Typical Input Capacitance @ Vds - (pF) | 1100@15V |
| Maximum Continuous Drain Current | 78 A |
| Maximum Drain Source Voltage | 30 V |
| Mounting Type | Surface Mount |
| Package Type | SuperSO8 5x6 |
| Configuration | Single |
| Continuous Drain Current (Id) | 78 A |
| Drain-Source Voltage (Vds) | 30 V |
| Fall Time | 3 ns |
| Gate-Source Voltage | 20 V |
| MSL | Level-1 |
| ON Resistance (Rds(on)) | 5.2 mOhm |
| Operating Temperature Max. | 150 °C |
| Operating Temperature Min. | -55 °C |
| Pins | 8 |
| Power Dissipation (Pd) | 37 W |
| Rise Time | 4.4 ns |
| Transistor Polarity | N-Channel |
| Turn-OFF Delay Time | 16 ns |
| Turn-ON Delay Time | 3.3 ns |
| Вес, г | 0.26 |
Техническая документация
Datasheet
pdf, 1390 КБ
Документация
pdf, 831 КБ
