2DB1713-13, Bipolar Transistors - BJT LO VSAT PNP SMT 2.5K
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см. техническую документацию
см. техническую документацию
423 ֏
от 10 шт. —
326 ֏
от 100 шт. —
172 ֏
от 1000 шт. —
131 ֏
1 шт.
на сумму 423 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Trans GP BJT PNP 12V 3A 2000mW 4-Pin(3+Tab) SOT-89 T/R
Технические параметры
| Brand | Diodes Incorporated |
| Collector- Base Voltage VCBO | -15 V |
| Collector- Emitter Voltage VCEO Max | -12 V |
| Collector-Emitter Saturation Voltage | -250 mV |
| Configuration | Single |
| DC Collector/Base Gain Hfe Min | 270 at 500 mA, 2 V |
| DC Current Gain HFE Max | 270 |
| Emitter- Base Voltage VEBO | -6 V |
| Factory Pack Quantity | 2500 |
| Gain Bandwidth Product FT | 180 MHz |
| Manufacturer | Diodes Incorporated |
| Maximum DC Collector Current | -6 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-89-3 |
| Packaging | Cut Tape or Reel |
| Pd - Power Dissipation | 2000 mW |
| Product Category | Bipolar Transistors-BJT |
| Product Type | BJTs-Bipolar Transistors |
| Series | 2DB17 |
| Subcategory | Transistors |
| Transistor Polarity | PNP |
| Automotive | No |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Flat |
| Maximum Collector Base Voltage (V) | 15 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.25@30mA@1.5A |
| Maximum Collector-Emitter Voltage (V) | 12 |
| Maximum DC Collector Current (A) | 3 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 2000 |
| Maximum Transition Frequency (MHz) | 180(Typ) |
| Minimum DC Current Gain | 270@500mA@2V |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 4 |
| PPAP | No |
| Standard Package Name | SOT |
| Supplier Package | SOT-89 |
| Tab | Tab |
| Type | PNP |
| Collector Current (Ic) | 3A |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 12V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 120mV@1.5A, 30mA |
| DC Current Gain (hFE@Ic,Vce) | 270@500mA, 2V |
| Power Dissipation (Pd) | 900mW |
| Transistor Type | PNP |
| Transition Frequency (fT) | 180MHz |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 78 КБ
Datasheet 2DB1713-13
pdf, 87 КБ
