BSC057N03LSGATMA1

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970 ֏

Мин. кол-во для заказа 2 шт.

от 5 шт. — 710 ֏

от 10 шт. — 600 ֏

от 73 шт. — 510 ֏

2 шт. на сумму 1 940 ֏

Номенклатурный номер: 8006798788

Электроэлемент

N-Channel MOSFET, 71 A, 30 V, 8-Pin TDSON Infineon BSC057N03LSGATMA1

Brand	Infineon Technologies
Channel Mode	Enhancement
Configuration	1 N-Channel
Factory Pack Quantity	5000
Fall Time	3.2 ns
Forward Transconductance - Min	36 S
Height	1.27 mm
Id - Continuous Drain Current	71 A
Length	5.9 mm
Manufacturer	Infineon
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	TDSON-8
Packaging	Reel
Part # Aliases	BSC057N03LS BSC057N03LSGXT G SP000275113
Pd - Power Dissipation	45 W
Product Category	MOSFET
Qg - Gate Charge	30 nC
Rds On - Drain-Source Resistance	4.8 mOhms
Rise Time	3.6 ns
RoHS	Details
Series	BSC057N03
Technology	Si
Tradename	OptiMOS
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	19 ns
Typical Turn-On Delay Time	4.7 ns
Vds - Drain-Source Breakdown Voltage	30 V
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	1 V
Width	5.15 mm
Automotive	No
Channel Type	N
Maximum Continuous Drain Current - (A)	17
Maximum Drain Source Resistance - (mOhm)	5.7 10V
Maximum Drain Source Voltage - (V)	30
Maximum Gate Source Voltage - (V)	??20
Maximum Power Dissipation - (mW)	2500
Military	No
Number of Elements per Chip	1
Operating Temperature - (??C)	-55~150
Pin Count	8
Standard Package Name	SON
Supplier Package	TDSON EP
Typical Gate Charge @ 10V - (nC)	22
Typical Gate Charge @ Vgs - (nC)	11 4.5VI20 10V
Typical Input Capacitance @ Vds - (pF)	1800 15V
Вес, г	0.1238