BSC014N04LS
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Описание
Электроэлемент
POWER FIELD-EFFECT TRANSISTOR, 32A I(D), 40V, 0.0019OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | 1 N-Channel |
| Factory Pack Quantity | 5000 |
| Fall Time | 7 ns |
| Forward Transconductance - Min | 120 S |
| Height | 1.27 mm |
| Id - Continuous Drain Current | 100 A |
| Length | 5.9 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TDSON-8 |
| Packaging | Reel |
| Part # Aliases | BSC014N04LSATMA1 BSC014N04LSXT SP000871196 |
| Pd - Power Dissipation | 96 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 85 nC |
| Rds On - Drain-Source Resistance | 1.1 mOhms |
| Rise Time | 9 ns |
| RoHS | Details |
| Series | BSC014N04 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 35 ns |
| Typical Turn-On Delay Time | 8 ns |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Width | 5.15 mm |
| Continuous Drain Current (Id) | - |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | - |
| Drain Source Voltage (Vdss) | - |
| Gate Threshold Voltage (Vgs(th)@Id) | - |
| Input Capacitance (Ciss@Vds) | - |
| Power Dissipation (Pd) | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Total Gate Charge (Qg@Vgs) | - |
| Type | - |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 5000 |
| Fall Time: | 7 ns |
| Forward Transconductance - Min: | 120 S |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | TDSON-8 |
| Part # Aliases: | SP000871196 BSC14N4LSXT BSC014N04LSATMA1 |
| Pd - Power Dissipation: | 96 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 85 nC |
| Rds On - Drain-Source Resistance: | 1.1 mOhms |
| Rise Time: | 9 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 35 ns |
| Typical Turn-On Delay Time: | 8 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Вес, г | 0.2 |
Техническая документация
Datasheet
pdf, 1573 КБ
