RN1910FE.LF(CT

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90 шт. с центрального склада, срок 2-3 недели

436 ֏

Мин. кол-во для заказа 2 шт.

Добавить в корзину 2 шт. на сумму 872 ֏

Альтернативные предложения2

Номенклатурный номер: 8007088465

Бренд: Toshiba

Электроэлемент

Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	100nA(ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V
Frequency - Transition	250MHz
Manufacturer	Toshiba Semiconductor and Storage
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Packaging	Cut Tape(CT)
Part Status	Active
Power - Max	100mW
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	-
Series	-
Supplier Device Package	ES6
Transistor Type	2 NPN-Pre-Biased(Dual)
Vce Saturation (Max) @ Ib, Ic	300mV @ 250ВµA, 5mA
Voltage - Collector Emitter Breakdown (Max)	50V
Brand:	Toshiba
Collector- Emitter Voltage VCEO Max:	50 V
Continuous Collector Current:	100 mA
DC Collector/Base Gain hFE Min:	120
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	4000
Manufacturer:	Toshiba
Mounting Style:	SMD/SMT
Package/Case:	SOT-563
Pd - Power Dissipation:	100 mW
Product Category:	Bipolar Transistors-Pre-Biased
Product Type:	BJTs-Bipolar Transistors-Pre-Biased
Series:	RN1910
Subcategory:	Transistors
Transistor Polarity:	NPN
Typical Input Resistor:	4.7 kOhms
Вес, г	0.003