BC856B-7-F
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132 ֏
Мин. кол-во для заказа 10 шт.
от 100 шт. —
75 ֏
от 500 шт. —
51 ֏
10 шт.
на сумму 1 320 ֏
Описание
Discrete Semiconductor Products\Transistors - Bipolar (BJT) - Single
Описание Транзистор: PNP, биполярный, 65В, 0,1А, 350мВт, SOT23 Характеристики Категория | Транзистор |
Тип | биполярный |
Вид | PNP |
Технические параметры
Base Product Number | BC856 -> |
Current - Collector (Ic) (Max) | 100mA |
Current - Collector Cutoff (Max) | 15nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
ECCN | EAR99 |
Frequency - Transition | 200MHz |
HTSUS | 8541.21.0075 |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Surface Mount |
Operating Temperature | -65В°C ~ 150В°C (TJ) |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Power - Max | 300mW |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | SOT-23-3 |
Transistor Type | PNP |
Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
Voltage - Collector Emitter Breakdown (Max) | 65V |
Automotive | No |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Gull-wing |
Maximum Base Emitter Saturation Voltage (V) | 1.1 5mA 100mA |
Maximum Collector Base Voltage (V) | 80 |
Maximum Collector Cut-Off Current (nA) | 15 |
Maximum Collector-Emitter Saturation Voltage (V) | 0.3 0.5mA 10mA|0.65 5mA 100mA |
Maximum Collector-Emitter Voltage (V) | 65 |
Maximum DC Collector Current (A) | 0.1 |
Maximum Emitter Base Voltage (V) | 5 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 350 |
Minimum DC Current Gain | 220 2mA 5V |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Operating Junction Temperature (°C) | -55 to 150 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 3 |
Pin Count | 3 |
PPAP | No |
Product Category | Bipolar Small Signal |
Standard Package Name | SOT-23 |
Supplier Package | SOT-23 |
Type | PNP |
Brand | Diodes Incorporated |
Collector- Base Voltage VCBO | -80 V |
Collector- Emitter Voltage VCEO Max | -65 V |
Collector-Emitter Saturation Voltage | -650 mV |
DC Collector/Base Gain Hfe Min | 220 at-2 mA, -5 V |
Emitter- Base Voltage VEBO | -5 V |
Factory Pack Quantity | 3000 |
Gain Bandwidth Product FT | 200 MHz |
Manufacturer | Diodes Incorporated |
Maximum DC Collector Current | -200 mA |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -65 C |
Mounting Style | SMD/SMT |
Pd - Power Dissipation | 300 mW |
Product Type | BJTs-Bipolar Transistors |
Series | BC856B |
Subcategory | Transistors |
Transistor Polarity | PNP |
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 80 V |
Collector- Emitter Voltage VCEO Max: | 65 V |
Collector-Emitter Saturation Voltage: | 250 mV |
Configuration: | Single |
DC Collector/Base Gain hFE Min: | 220 at-2 mA, -5 V |
Emitter- Base Voltage VEBO: | 5 V |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Gain Bandwidth Product fT: | 200 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 100 mA |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -65 C |
Mounting Style: | SMD/SMT |
Package/Case: | SOT-23-3 |
Pd - Power Dissipation: | 310 mW |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | BC856B |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | PNP |
Maximum Collector Base Voltage | -80 V |
Maximum Collector Emitter Voltage | -65 V |
Maximum Emitter Base Voltage | -5 V |
Maximum Operating Frequency | 200 MHz |
Maximum Power Dissipation | 300 mW |
Package Type | SOT-23 |
Transistor Configuration | Single |
Вес, г | 0.01 |