IPD70N03S4L04ATMA1
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см. техническую документацию
см. техническую документацию
2 380 ֏
от 2 шт. —
1 940 ֏
от 5 шт. —
1 610 ֏
от 10 шт. —
1 490 ֏
1 шт.
на сумму 2 380 ֏
Описание
Электроэлемент
MOSFET, N-CH, 30V,70A, TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Pow
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 70A(Tc) |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300pF @ 25V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | TO-252-3, DPak(2 Leads+Tab), SC-63 |
| Packaging | Tape & Reel(TR) |
| Part Status | Active |
| Power Dissipation (Max) | 68W(Tc) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 70A, 10V |
| Series | OptiMOSв(ў |
| Supplier Device Package | PG-TO252-3 |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±16V |
| Vgs(th) (Max) @ Id | 2.2V @ 30ВµA |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 2500 |
| Fall Time: | 5 ns |
| Id - Continuous Drain Current: | 70 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | DPAK-3(TO-252-3) |
| Part # Aliases: | IPD70N03S4L-04 SP000274986 |
| Pd - Power Dissipation: | 68 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 48 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 3.6 mOhms |
| Rise Time: | 5 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 27 ns |
| Typical Turn-On Delay Time: | 7 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -16 V, +16 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Channel Type | N |
| Maximum Continuous Drain Current | 70 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | PG-TDSON-8 |
| Вес, г | 1.43 |
Техническая документация
Datasheet
pdf, 185 КБ
Datasheet IPD70N03S4L04ATMA1
pdf, 186 КБ
