CE3512K2-C1, RF JFET Transistors 12GHz NF .3dB Ga 13.7dB -55C +125C
1 850 ֏
от 10 шт. —
1 460 ֏
от 100 шт. —
1 040 ֏
от 500 шт. —
850 ֏
1 шт.
на сумму 1 850 ֏
Номенклатурный номер: 8007257254
Бренд: California Eastern Labs
Описание
RF & Wireless\RF Transistors\RF JFET Transistors
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Junction FET
Технические параметры
| Automotive | No |
| Channel Type | N |
| Maximum Continuous Drain Current - (A) | 0.068 |
| Maximum Drain Source Voltage - (V) | 4 |
| Maximum Frequency - (MHz) | 12000 |
| Maximum Gate Source Voltage - (V) | -3 |
| Maximum Power Dissipation - (mW) | 125000 |
| Military | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~150 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Supplier Package | Micro-X |
| Вес, г | 0.1 |
