IXKR40N60C, MOSFETs 40 Amps 600V
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см. техническую документацию
см. техническую документацию
30 400 ֏
от 10 шт. —
24 100 ֏
от 30 шт. —
20 900 ֏
от 60 шт. —
20 300 ֏
Добавить в корзину 1 шт.
на сумму 30 400 ֏
Описание
Unclassified
Технические параметры
| Brand: | IXYS |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Fall Time: | 10 ns |
| Id - Continuous Drain Current: | 38 A |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 250 nC |
| Rds On - Drain-Source Resistance: | 70 mOhms |
| Rise Time: | 30 ns |
| Series: | IXKR40N60 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | CoolMOS, ISOPLUS247 |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | CoolMOS Power MOSFET |
| Typical Turn-Off Delay Time: | 110 ns |
| Typical Turn-On Delay Time: | 20 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.9 V |
| Вес, г | 6 |
Техническая документация
Datasheet
pdf, 146 КБ
