2SC2714-Y(TE85L.F), 20V 100mW 100@1mA,6V 30mA NPN TO-236-3 Bipolar Transistors - BJT ROHS

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14100 шт., срок 8-10 недель

53 ֏

Кратность заказа 50 шт.

50 шт. на сумму 2 650 ֏

Альтернативные предложения3

Номенклатурный номер: 8007327176

Бренд: Toshiba

РЧ транзистор NPN 30V 20mA 550MHz 100mW Surface Mount S-Mini

Base Product Number	2SK3117 ->
Current - Collector (Ic) (Max)	20mA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA, 6V
ECCN	EAR99
Frequency - Transition	550MHz
Gain	23dB
HTSUS	8541.21.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f)	2.5dB @ 100MHz
Operating Temperature	125В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-236-3, SC-59, SOT-23-3
Power - Max	100mW
RoHS Status	RoHS Compliant
Supplier Device Package	S-Mini
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Brand:	Toshiba
Collector- Base Voltage VCBO:	40 V
Collector- Emitter Voltage VCEO Max:	30 V
Configuration:	Single
Continuous Collector Current:	20 mA
DC Collector/Base Gain hFE Min:	40
DC Current Gain hFE Max:	200
Emitter- Base Voltage VEBO:	4 V
Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	550 MHz
Manufacturer:	Toshiba
Maximum DC Collector Current:	20 mA
Maximum Operating Temperature:	+125 C
Mounting Style:	SMD/SMT
Package/Case:	SOT-346-3
Pd - Power Dissipation:	100 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN