ZXTC2062E6TA, Bipolar Transistors - BJT 20V 1A Complementary Med power transisto

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840 ֏

от 10 шт. — 750 ֏

от 100 шт. — 484 ֏

от 500 шт. — 400 ֏

1 шт. на сумму 840 ֏

Номенклатурный номер: 8007355398

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	100 V, 25 V
Collector- Emitter Voltage VCEO Max:	20 V
Collector-Emitter Saturation Voltage:	140 mV, 190 mV
Configuration:	Dual
DC Current Gain hFE Max:	300 at 10 mA, 2 V
Emitter- Base Voltage VEBO:	7 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	215 MHz, 290 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	4 A, 3.5 A
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-26-6
Pd - Power Dissipation:	1.7 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	ZXTC2062
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN, PNP
Вес, г	0.01