SQ3426EV-T1_GE3
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Описание
Электроэлемент
Mosfet, N-Ch, 60V, 7A, 175Deg C, 5W Rohs Compliant: Yes |Vishay SQ3426EV-T1_GE3
Технические параметры
| AEC Qualified Number | AEC-Q101 |
| Automotive | Yes |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current - (A) | 7 |
| Maximum Drain Source Resistance - (mOhm) | 42@10V |
| Maximum Drain Source Voltage - (V) | 60 |
| Maximum Gate Source Voltage - (V) | ??20 |
| Maximum Gate Threshold Voltage - (V) | 2.5 |
| Maximum Power Dissipation - (mW) | 5000 |
| Military | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~175 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Process Technology | TrenchFET |
| Supplier Package | TSOP |
| Typical Gate Charge @ Vgs - (nC) | 6.3@4.5V |
| Typical Input Capacitance @ Vds - (pF) | 560@30V |
| Case | TSOP6 |
| Drain current | 7A |
| Drain-source voltage | 60V |
| Gate charge | 6.3nC |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Manufacturer | VISHAY |
| Mounting | SMD |
| On-state resistance | 71mΩ |
| Polarisation | unipolar |
| Power dissipation | 5W |
| Pulsed drain current | 29A |
| Technology | TrenchFET® |
| Type of transistor | N-MOSFET |
| Вес, г | 0.012 |
Техническая документация
Datasheet
pdf, 337 КБ
Документация
pdf, 237 КБ
