SI1539CDL-T1-BE3, MOSFETs 30V N&P-CHANNEL (D-S) COMP
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Описание
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N & P Channel Pair Thermally Enhanced MOSFETsVishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (R DS(on) ) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design.
Технические параметры
| Brand: | Vishay/Siliconix |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 15 ns |
| Id - Continuous Drain Current: | 700 mA |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | SOT-363-6 |
| Part # Aliases: | SI1539CDL-T1-GE3 |
| Pd - Power Dissipation: | 340 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 3 nC |
| Rds On - Drain-Source Resistance: | 388 mOhms, 890 mOhms |
| Rise Time: | 25 ns |
| Series: | SI1 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | N-Channel, P-Channel |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Typical Turn-Off Delay Time: | 12 ns |
| Typical Turn-On Delay Time: | 26 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Вес, г | 1 |
