IPD090N03LGATMA1
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см. техническую документацию
см. техническую документацию
880 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
620 ֏
от 10 шт. —
520 ֏
от 100 шт. —
423 ֏
2 шт.
на сумму 1 760 ֏
Описание
Электроэлемент
MOSFET, N-CH, 30V, 40A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; P
Технические параметры
| RoHS Compliant | Yes |
| Channel Mode | enhancement |
| Channel Type | n |
| Configuration | single |
| ECCN (US) | ear99 |
| EU RoHS | compliant with exemption |
| Lead Shape | gull-wing |
| Maximum Continuous Drain Current (A) | 40 |
| Maximum Diode Forward Voltage (V) | 1.1 |
| Maximum Drain Source Resistance (mOhm) | 9 10v |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.2 |
| Maximum IDSS (uA) | 1 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 75 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation (mW) | 42000 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 280 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | surface mount |
| Number of Elements per Chip | 1 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Packaging | tape and reel |
| Part Status | active |
| PCB changed | 2 |
| Pin Count | 3 |
| Process Technology | optimos |
| Product Category | power mosfet |
| Standard Package Name | to-252 |
| Supplier Package | dpak |
| Tab | tab |
| Typical Diode Forward Voltage (V) | 0.91 |
| Typical Fall Time (ns) | 2.6 |
| Typical Gate Charge @ 10V (nC) | 15 |
| Typical Gate Charge @ Vgs (nC) | 7.4 4.5v|15 10v |
| Typical Gate Plateau Voltage (V) | 3.4 |
| Typical Gate to Drain Charge (nC) | 1.8 |
| Typical Gate to Source Charge (nC) | 4 |
| Typical Input Capacitance @ Vds (pF) | 1200 15v |
| Typical Output Capacitance (pF) | 500 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 24 15v |
| Typical Rise Time (ns) | 3 |
| Typical Switch Charge (nC) | 3.9 |
| Typical Turn-Off Delay Time (ns) | 15 |
| Typical Turn-On Delay Time (ns) | 4 |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 2.6 ns |
| Forward Transconductance - Min: | 53 S |
| Id - Continuous Drain Current: | 40 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-252-3 |
| Part # Aliases: | IPD090N03L G SP000680636 |
| Pd - Power Dissipation: | 42 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 15 nC |
| Rds On - Drain-Source Resistance: | 7.5 mOhms |
| Rise Time: | 3 ns |
| Series: | OptiMOS 3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | OptiMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 15 ns |
| Typical Turn-On Delay Time: | 4 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
| Case | PG-TO252-3 |
| Drain current | 30A |
| Drain-source voltage | 30V |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Manufacturer | INFINEON TECHNOLOGIES |
| On-state resistance | 9mΩ |
| Polarisation | unipolar |
| Power dissipation | 42W |
| Technology | OptiMOS™ 3 |
| Type of transistor | N-MOSFET |
| Вес, г | 1.43 |
