IPG20N06S415AATMA1
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см. техническую документацию
см. техническую документацию
1 980 ֏
от 2 шт. —
1 540 ֏
от 5 шт. —
1 230 ֏
от 10 шт. —
1 120 ֏
1 шт.
на сумму 1 980 ֏
Описание
Электроэлемент
MOSFET, AEC-Q101, DUAL N-CH, 20A, TDSON; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0129ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:50W; Transistor Case Style:TDSON; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T2 Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
Технические параметры
| AEC Qualified Number | AEC-Q101 |
| Automotive | Yes |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current - (A) | 20 |
| Maximum Drain Source Resistance - (mOhm) | 15.5@10V |
| Maximum Drain Source Voltage - (V) | 60 |
| Maximum Gate Source Voltage - (V) | ??20 |
| Maximum Gate Threshold Voltage - (V) | 4 |
| Maximum Power Dissipation - (mW) | 50000 |
| Military | No |
| Number of Elements per Chip | 2 |
| Operating Temperature - (??C) | -55~175 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Process Technology | OptiMOS-T2 |
| Supplier Package | TDSON EP |
| Typical Gate Charge @ 10V - (nC) | 22 |
| Typical Gate Charge @ Vgs - (nC) | 22@10V |
| Typical Input Capacitance @ Vds - (pF) | 1740@25V |
| Maximum Continuous Drain Current | 20 A |
| Maximum Drain Source Voltage | 60 V |
| Mounting Type | Surface Mount |
| Package Type | SuperSO8 5x6 |
Техническая документация
Datasheet IPG20N06S415AATMA1
pdf, 268 КБ
