TK5P60W,RVQ
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
8975 шт., срок 8-10 недель
2 320 ֏
Добавить в корзину 1 шт.
на сумму 2 320 ֏
Альтернативные предложения1
Описание
DTMOSIV Series MOSFETs
Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in R DS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the R DS(on) makes it possible to house lower R DS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.
Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in R DS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the R DS(on) makes it possible to house lower R DS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.
Технические параметры
| Brand: | Toshiba |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Fall Time: | 7 ns |
| Id - Continuous Drain Current: | 5.4 A |
| Manufacturer: | Toshiba |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | DPAK-3 |
| Pd - Power Dissipation: | 60 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 10.5 nC |
| Rds On - Drain-Source Resistance: | 900 mOhms |
| Rise Time: | 18 ns |
| Series: | TK5P60W |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | DTMOSIV |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 50 ns |
| Typical Turn-On Delay Time: | 40 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.7 V |
Техническая документация
Datasheet TK5P60W.RVQ
pdf, 240 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 30 августа1 | бесплатно |
| HayPost | 3 сентября1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
