FMMT417TD
![FMMT417TD](https://static.chipdip.ru/lib/472/DOC018472445.jpg)
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см. техническую документацию
см. техническую документацию
9 300 ֏
от 10 шт. —
7 500 ֏
от 100 шт. —
6 100 ֏
от 500 шт. —
5 600 ֏
1 шт.
на сумму 9 300 ֏
Технические параметры
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 320 V |
Collector- Emitter Voltage VCEO Max: | 100 V |
Collector-Emitter Saturation Voltage: | 500 mV |
Configuration: | Single |
Continuous Collector Current: | 500 mA |
DC Collector/Base Gain hfe Min: | 25 at 10 mA, 10 V |
DC Current Gain hFE Max: | 25 at 10 mA, 10 V |
Emitter- Base Voltage VEBO: | 6 V |
Factory Pack Quantity: Factory Pack Quantity: | 500 |
Gain Bandwidth Product fT: | 40 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 500 mA |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-23-3 |
Pd - Power Dissipation: | 500 mW |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | FMMT41 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | NPN |
Collector Current (Ic) | 500mA |
Collector Cut-Off Current (Icbo) | 100nA |
Collector-Emitter Breakdown Voltage (Vceo) | 100V |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 500mV@10mA, 1mA |
DC Current Gain (hFE@Ic,Vce) | 25@10mA, 10V |
Power Dissipation (Pd) | 330mW |
Transistor Type | NPN |
Transition Frequency (fT) | 40MHz |
Вес, г | 0.008 |
Техническая документация
Datasheet
pdf, 534 КБ