6ED003L06F2XUMA1
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см. техническую документацию
5 700 ֏
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4 150 ֏
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Описание
Silicon-on-Insulator (SOI) Gate Driver ICs
Infineon Silicon-on-Insulator (SOI) Gate Driver ICs are level-shift high voltage gate driver ICs for IGBTs and MOSFETs. The SOI technology is a high-voltage, level-shift technology providing unique, measurable, and best-in-class advantages. These include integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that are causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.
Infineon Silicon-on-Insulator (SOI) Gate Driver ICs are level-shift high voltage gate driver ICs for IGBTs and MOSFETs. The SOI technology is a high-voltage, level-shift technology providing unique, measurable, and best-in-class advantages. These include integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that are causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.
Технические параметры
| Automotive | No |
| Bridge Type | Full Bridge |
| Driver Type | High and Low Side |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| High and Low Sides Dependency | Independent |
| Input Logic Compatibility | CMOS|LSTTL|3.3V(Min) |
| Latch-Up Proof | Yes |
| Lead Shape | Gull-wing |
| Maximum Fall Time (ns) | 45 |
| Maximum Operating Supply Voltage (V) | 17.5 |
| Maximum Operating Temperature (°C) | 105 |
| Maximum Power Dissipation (mW) | 1300 |
| Maximum Propagation Delay Time (ns) | 800 |
| Maximum Rise Time (ns) | 100 |
| Maximum Turn-Off Delay Time (ns) | 100 |
| Maximum Turn-On Delay Time (ns) | 100 |
| Minimum Operating Supply Voltage (V) | 13 |
| Minimum Operating Temperature (°C) | -40 |
| Mounting | Surface Mount |
| Number of Drivers | 6 |
| Number of Outputs | 6 |
| Packaging | Tape and Reel |
| Part Status | NRND |
| PCB changed | 28 |
| Peak Output Current (A) | 0.42(Typ) |
| Pin Count | 28 |
| PPAP | No |
| Special Features | Current Limit|Undervoltage Lockout |
| Standard Package Name | SOP |
| Supplier Package | DSO |
| Type | IGBT|MOSFET |
| Typical Input High Threshold Voltage (V) | 2.1 |
| Typical Input Low Threshold Voltage (V) | 0.9 |
| Brand: | Infineon Technologies |
| Configuration: | Inverting |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 26 ns |
| Logic Type: | CMOS, LSTTL |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +105 C |
| Minimum Operating Temperature: | -40 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Number of Drivers: | 6 Driver |
| Number of Outputs: | 6 Output |
| Operating Supply Current: | 1.1 mA |
| Output Current: | 165 mA |
| Package / Case: | DSO-28 |
| Packaging: | Reel, Cut Tape |
| Part # Aliases: | 6ED003L06-F2 SP000929928 |
| Pd - Power Dissipation: | 1.3 W |
| Product Category: | Gate Drivers |
| Product Type: | Gate Drivers |
| Product: | IGBT, MOSFET Gate Drivers |
| Rise Time: | 60 ns |
| Series: | Infineon SOI |
| Shutdown: | Shutdown |
| Subcategory: | PMIC-Power Management ICs |
| Supply Voltage - Max: | 17.5 V |
| Supply Voltage - Min: | 13 V |
| Technology: | Si |
| Tradename: | EiceDRIVER |
| Type: | High-Side, Low-Side |
| Fall Time | 45ns |
| Logic Type | CMOS |
| Output Current | 165 mA |
| Package Type | DSO28 |
| Supply Voltage | 25V |
| Вес, г | 1 |
