TC2320TG-G
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Описание
Trans MOSFET N/P-CH Si 200V 8-Pin SOIC N T/R
Технические параметры
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N|P |
Configuration | Dual Dual Drain |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Gull-wing |
Material | Si |
Maximum Drain Source Resistance (mOhm) | 7000@10V@N Channel|12000@10V@P Channel |
Maximum Drain Source Voltage (V) | 200 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 2 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 8 |
Pin Count | 8 |
PPAP | No |
Product Category | Power MOSFET |
Standard Package Name | SO |
Supplier Package | SOIC N |
Typical Fall Time (ns) | 25(Max)@N Channel|15(Max)@P Channel |
Typical Input Capacitance @ Vds (pF) | 110(Max)@25V@N Channel|125(Max)@25V@P Channel |
Typical Rise Time (ns) | 15(Max) |
Typical Turn-Off Delay Time (ns) | 25(Max)@N Channel|20(Max)@P Channel |
Typical Turn-On Delay Time (ns) | 20(Max)@N Channel|10(Max)@P Channel |
Техническая документация
Datasheet
pdf, 802 КБ