ZXTC6719MCTA
![ZXTC6719MCTA](https://static.chipdip.ru/lib/488/DOC029488652.jpg)
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см. техническую документацию
см. техническую документацию
1 100 ֏
от 10 шт. —
880 ֏
от 100 шт. —
590 ֏
от 500 шт. —
445 ֏
1 шт.
на сумму 1 100 ֏
Технические параметры
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 100 V, 50 V |
Collector- Emitter Voltage VCEO Max: | 50 V, 40 V |
Collector-Emitter Saturation Voltage: | 270 mV, 260 mV |
Configuration: | Dual |
Continuous Collector Current: | -3 A, 4 A |
DC Collector/Base Gain hfe Min: | 200 at 10 mA, 2 V |
Emitter- Base Voltage VEBO: | 7 V |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Gain Bandwidth Product fT: | 165 MHz, 190 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 4 A, 3 A |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package / Case: | DFN3020B-8 |
Pd - Power Dissipation: | 1.5 W |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | ZXTC67 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | NPN, PNP |
Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 220 КБ