CSD16415Q5
![CSD16415Q5](https://static.chipdip.ru/lib/214/DOC027214397.jpg)
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см. техническую документацию
см. техническую документацию
3 170 ֏
от 10 шт. —
2 420 ֏
от 100 шт. —
1 810 ֏
от 500 шт. —
1 330 ֏
1 шт.
на сумму 3 170 ֏
Описание
NexFET™ Power MOSFETs
Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 12.7 ns |
Forward Transconductance - Min: | 168 S |
Id - Continuous Drain Current: | 100 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | VSON-CLIP-8 |
Pd - Power Dissipation: | 3.2 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 21 nC |
Rds On - Drain-Source Resistance: | 1.5 mOhms |
Rise Time: | 30 ns |
Series: | CSD16415Q5 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 20 ns |
Typical Turn-On Delay Time: | 16.6 ns |
Vds - Drain-Source Breakdown Voltage: | 25 V |
Vgs - Gate-Source Voltage: | -16 V, +16 V |
Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
Вес, г | 1 |