CSD16412Q5A, MOSFETs N-Ch NexFET Power MOSFETs
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Описание
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Texas Instruments NexFET™ Power MOSFET The Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 2500 |
| Fall Time: | 3.3 ns |
| Forward Transconductance - Min: | 33 S |
| Id - Continuous Drain Current: | 60 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSONP-8 |
| Pd - Power Dissipation: | 3 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 2.9 nC |
| Rds On - Drain-Source Resistance: | 13 mOhms |
| Rise Time: | 7.1 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 5.7 ns |
| Typical Turn-On Delay Time: | 5.5 ns |
| Vds - Drain-Source Breakdown Voltage: | 25 V |
| Vgs - Gate-Source Voltage: | -16 V, +16 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Continuous Drain Current (Id) | 80A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | - |
| Drain Source Voltage (Vdss) | 30V |
| Type | 1PCSNChannel |
| Вес, г | 0.1 |
Техническая документация
Datasheet CSD16412Q5A
pdf, 208 КБ
