SI2314EDS-T1-E3
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Описание
Trans MOSFET N-CH 20V 3.77A 3-Pin SOT-23 T/R
Технические параметры
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Gull-wing |
Maximum Continuous Drain Current (A) | 3.77 |
Maximum Drain Source Resistance (mOhm) | 33 4.5V |
Maximum Drain Source Voltage (V) | 20 |
Maximum Gate Source Voltage (V) | ±12 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 1250 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Packaging | Tape and Reel |
Part Status | NRND |
PCB changed | 3 |
Pin Count | 3 |
PPAP | No |
Process Technology | TrenchFET |
Product Category | Power MOSFET |
Standard Package Name | SOT |
Supplier Package | SOT-23 |
Typical Fall Time (ns) | 5900 |
Typical Gate Charge @ Vgs (nC) | 11 4.5V |
Typical Rise Time (ns) | 1400 |
Typical Turn-Off Delay Time (ns) | 13500 |
Typical Turn-On Delay Time (ns) | 530 |
Техническая документация
Datasheet SI2314EDS-T1-E3
pdf, 159 КБ