TC6320K6-G
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см. техническую документацию
см. техническую документацию
2 290 ֏
от 25 шт. —
1 720 ֏
от 100 шт. —
1 510 ֏
от 3300 шт. —
1 310 ֏
1 шт.
на сумму 2 290 ֏
Технические параметры
| Brand: | Microchip Technology |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 3300 |
| Fall Time: | 15 ns, 15 ns |
| Forward Transconductance - Min: | 400 mS, 400 mS |
| Id - Continuous Drain Current: | 1 A |
| Manufacturer: | Microchip |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | DFN-8 |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signal |
| Rds On - Drain-Source Resistance: | 7 Ohms, 8 Ohms |
| Rise Time: | 15 ns, 15 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel, P-Channel |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Typical Turn-Off Delay Time: | 20 ns, 20 ns |
| Typical Turn-On Delay Time: | 10 ns, 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
Техническая документация
Datasheet
pdf, 679 КБ
