SI4434DY-T1-E3
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3 830 ֏
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2 940 ֏
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2 040 ֏
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1 600 ֏
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Описание
SI4434DY-T1-GE3 Vishay MOSFETs Transistor N-CH 250V 2.1A 8-Pin SOIC N T/R - Arrow.com
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 2.1 |
| Maximum Drain Source Resistance (mOhm) | 155@10V |
| Maximum Drain Source Voltage (V) | 250 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 3100 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Process Technology | TrenchFET |
| Product Category | Power MOSFET |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| Typical Fall Time (ns) | 19 |
| Typical Gate Charge @ 10V (nC) | 34 |
| Typical Gate Charge @ Vgs (nC) | 34@10V |
| Typical Rise Time (ns) | 23 |
| Typical Turn-Off Delay Time (ns) | 47 |
| Typical Turn-On Delay Time (ns) | 16 |
| Brand | Vishay Semiconductors |
| Factory Pack Quantity | 2500 |
| Manufacturer | Vishay |
| Part # Aliases | SI4434DY-GE3 |
| RoHS | Details |
| Series | SI4 |
| Technology | Si |
| Tradename | TrenchFET |
| Unit Weight | 0.006596 oz |
| Вес, г | 0.25 |
Техническая документация
Datasheet
pdf, 184 КБ
Документация
pdf, 179 КБ
