CSD19531Q5A
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
2 290 ֏
от 10 шт. —
1 740 ֏
от 100 шт. —
1 280 ֏
от 500 шт. —
1 020 ֏
Добавить в корзину 1 шт.
на сумму 2 290 ֏
Описание
TI N-Channel 8-23-12
Технические параметры
| RoHS Compliant | Yes |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Resistance | 6400000 Ω |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Threshold Voltage | 2.7V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | VSONP |
| Pin Count | 8 |
| Series | NexFET |
| Transistor Material | Si |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 5.2 ns |
| Forward Transconductance - Min: | 82 S |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSONP-8 |
| Pd - Power Dissipation: | 3.3 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 37 nC |
| Rds On - Drain-Source Resistance: | 6.4 mOhms |
| Rise Time: | 5.8 ns |
| Series: | CSD19531Q5A |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 18.4 ns |
| Typical Turn-On Delay Time: | 6 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.7 V |
Техническая документация
Datasheet
pdf, 767 КБ
