CSD17579Q5A

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840 ֏

Мин. кол-во для заказа 2 шт.

от 5 шт. — 580 ֏

от 10 шт. — 454 ֏

от 100 шт. — 367 ֏

2 шт. на сумму 1 680 ֏

Номенклатурный номер: 8007644404

Электроэлемент

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 13.3 mOhm 8-VSONP -55 to 150

Brand	Texas Instruments
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	250
Fall Time	1 ns
Forward Transconductance - Min	36 S
Id - Continuous Drain Current	46 A
Manufacturer	Texas Instruments
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	VSON-8
Packaging	Reel
Pd - Power Dissipation	36 W
Product Category	MOSFET
Qg - Gate Charge	5.4 nC
Rds On - Drain-Source Resistance	11.6 mOhms
Rise Time	7 ns
RoHS	Details
Series	CSD17579Q5A
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	13 ns
Typical Turn-On Delay Time	3 ns
Unit Weight	0.000847 oz
Vds - Drain-Source Breakdown Voltage	30 V
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	1 V
Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Id - Continuous Drain Current:	20 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	VSONP-8
Pd - Power Dissipation:	36 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	15.1 nC
Rds On - Drain-Source Resistance:	11.6 mOhms
Series:	CSD17579Q5A
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Вес, г	0.076