FMMT624TA

Фото 1/4 FMMT624TA
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см. техническую документацию
750 ֏
от 10 шт.660 ֏
от 100 шт.396 ֏
от 500 шт.297 ֏
1 шт. на сумму 750 ֏
Номенклатурный номер: 8007652285
Бренд: DIODES INC.

Описание

Биполярный транзистор, NPN, 125 В, 1 А

Технические параметры

Collector-Emitter Breakdown Voltage 125V
Maximum DC Collector Current 1A
Pd - Power Dissipation 625mW
Transistor Type NPN
Maximum Collector Base Voltage 125 V
Maximum Collector Emitter Voltage 125 V
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 155 MHz
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 625 mW
Minimum DC Current Gain 300
Mounting Type Surface Mount
Number of Elements per Chip 1
Package Type SOT-23
Pin Count 3
Transistor Configuration Single
Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 125 V
Collector- Emitter Voltage VCEO Max: 125 V
Collector-Emitter Saturation Voltage: 165 mV
Configuration: Single
Continuous Collector Current: 1 A
Emitter- Base Voltage VEBO: 7 V
Factory Pack Quantity: Factory Pack Quantity: 3000
Gain Bandwidth Product fT: 155 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Pd - Power Dissipation: 625 mW
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: FMMT62
Subcategory: Transistors
Technology: Si
Transistor Polarity: NPN

Техническая документация

Datasheet
pdf, 1680 КБ
Datasheet
pdf, 287 КБ
Datasheet FMMT624TA
pdf, 210 КБ