CSD83325L
![CSD83325L](https://static.chipdip.ru/lib/999/DOC046999189.jpg)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
800 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
530 ֏
от 10 шт. —
440 ֏
от 100 шт. —
356 ֏
2 шт.
на сумму 1 600 ֏
Описание
Электроэлемент
MOSFET 12-V, N channel NexFET power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection 6-PICOSTAR -55 to 150
Технические параметры
Brand | Texas Instruments |
Configuration | Dual |
Factory Pack Quantity | 250 |
Fall Time | 589 ns |
Forward Transconductance - Min | 36 S |
Height | 0.2 mm |
Id - Continuous Drain Current | 8 A |
Length | 2.2 mm |
Manufacturer | Texas Instruments |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 2 Channel |
Package / Case | BGA-6 |
Packaging | Cut Tape |
Pd - Power Dissipation | 2.3 W |
Product | Power MOSFET |
Product Category | MOSFET |
Qg - Gate Charge | 8.4 nC |
Rds On - Drain-Source Resistance | 5.9 mOhms |
Rise Time | 353 ns |
RoHS | Details |
Series | CSD83325L |
Technology | Si |
Tradename | NexFET |
Transistor Polarity | N-Channel |
Transistor Type | 2 N-Channel |
Typical Turn-Off Delay Time | 711 ns |
Typical Turn-On Delay Time | 205 ns |
Vds - Drain-Source Breakdown Voltage | 12 V |
Vgs - Gate-Source Voltage | 10 V |
Vgs th - Gate-Source Threshold Voltage | 0.95 V |
Width | 1.15 mm |
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Dual |
Factory Pack Quantity: | 3000 |
Fall Time: | 589 ns |
Forward Transconductance - Min: | 36 S |
Id - Continuous Drain Current: | 8 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 2 Channel |
Package / Case: | PICOSTAR-6 |
Pd - Power Dissipation: | 2.3 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 10.9 nC |
Rds On - Drain-Source Resistance: | 11.9 mOhms |
Rise Time: | 353 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 2 N-Channel |
Typical Turn-Off Delay Time: | 711 ns |
Typical Turn-On Delay Time: | 205 ns |
Vds - Drain-Source Breakdown Voltage: | 12 V |
Vgs - Gate-Source Voltage: | -10 V, +10 V |
Vgs th - Gate-Source Threshold Voltage: | 750 mV |
Вес, г | 0.07 |
Техническая документация
Datasheet
pdf, 1138 КБ
Datasheet CSD83325LT
pdf, 1222 КБ